au.\*:("CLOWES, S. K")
Results 1 to 12 of 12
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Exploration of the inherent magnetoresistance in InSb thin filmsTONG ZHAN; HARRIS, J. J; BRANFORD, W. R et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1543-1546, issn 0268-1242, 4 p.Article
Spin polarization of the transport current at the free surface of bulk NiMnSbCLOWES, S. K; MIYOSHI, Y; BUGOSLAVSKY, Y et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 21, pp 214425.1-214425.5, issn 1098-0121Article
Spin lifetimes in narrow gap semiconductors measured with free-electron and solid-state lasersMURDIN, B. N; MERRICK, M; ASHLEY, T et al.Proceedings - Electrochemical Society. 2004, pp 253-258, issn 0161-6374, isbn 1-56677-407-1, 6 p.Conference Paper
Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin filmsZHANG, T; HARRIS, J. J; CLOWES, S. K et al.Semiconductor science and technology. 2005, Vol 20, Num 12, pp 1153-1156, issn 0268-1242, 4 p.Article
Thickness dependence of Hall transport in Ni1.15Mn0.85Sb thin films on siliconBRANFORD, W. R; CLOWES, S. K; COHEN, L. F et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 201305.1-201305.4, issn 1098-0121Article
Phosphine adsorption and the production of phosphide phases on Cu(001)GONCHAROVA, L. V; CLOWES, S. K; FOGG, R. R et al.Surface science. 2002, Vol 515, Num 2-3, pp 553-566, issn 0039-6028Article
Preparation of InAs(0 01) surface for spin injection via a chemical routeSINGH, L. J; OLIVER, R. A; BUCKLE, L et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 10, pp 3190-3193, issn 0022-3727, 4 p.Article
Possibilities and limitations of point-contact spectroscopy for measurements of spin polarizationBUGOSLAVSKY, Y; MIYOSHI, Y; CLOWES, S. K et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 10, pp 104523.1-104523.10, issn 1098-0121Article
The adsorption and decomposition of chromium hexacarbonyl on Pd(100)CLOWES, S. K; SEDDON, E. A; MCCASH, E. M et al.Surface science. 2000, Vol 464, Num 1, pp L667-L672, issn 0039-6028Article
Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperaturesLEONTIADOU, M. A; LITVINENKO, K. L; CLOWES, S. K et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 3, issn 0953-8984, 035801.1-035801.5Article
Temperature and doping dependence of spin relaxation in n-InAsMURDIN, B. N; LITVINENKO, K; COHEN, L. F et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085346.1-085346.5, issn 1098-0121Article
The role of impurity band conduction in the low temperature characteristics of thin InSb films grown by molecular beam epitaxyHARRIS, J. J; ZHANG, T; BRANFORD, W. R et al.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1406-1410, issn 0268-1242, 5 p.Article
